1/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.05 - rev.a 1.5v drive nch mosfet RW1C020UN z structure z dimensions (unit : mm) silicon n-channel mosfet z features 1) low on-resistance. 2) built-in g-s protection diode. 3) space saving, small surface mount package (wemt6). 4) low voltage drive (1.5v drive). z applications z inner circuit switching z packaging specifications package code taping basic ordering unit (pieces) RW1C020UN t2r 8000 type z absolute maximum ratings (ta=25 c) ? 1 ? 1 ? 2 parameter v v dss symbol 20 v v gss 10 a i d 2 a i dp 6 a i s 0.5 a i sp 6 w p d 0.7 c tch 150 c tstg ? 55 to + 150 limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 when mounted on a ceramic board source current (body diode) z thermal resistance c / w rth (ch-a) 179 parameter symbol limits unit channel to ambient ? when mounted on a ceramic board ? wemt6 (6) (5) (4) (1) (2) (3) abbreviated symbol : xk (1) drain (2) drain (3) gate (4) source (5) drain (6) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (3) (2) (1) (4) (5) (6)
RW1C020UN data sheet 2/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.05 - rev.a z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ?? 10 av gs = 10v, v ds =0v v dd 10v 20 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 20v, v gs =0v 0.3 ? 1.0 v v ds = 10v, i d = 1ma ? 75 105 i d = 2a, v gs = 4.5v ? 95 135 m ? m ? m ? i d = 2a, v gs = 2.5v ? 170 240 i d = 0.4a, v gs = 1.5v 1.8 ?? sv ds = 10v, i d = 2a ? 180 ? pf v ds = 10v ? 45 25 ? pf v gs =0v ? 6 ? pf f=1mhz ? 17 ? ns ? 30 ? ns ? 30 ? ns ? 2.0 ? ns ? 0.6 ? nc ? 0.4 ? nc v gs = 4.5v ?? nc i d = 2a v dd 10 v i d = 1a v gs = 4.5v r l 10 ? r g =10 ? r l 5 ? r g =10 ? ? pulsed m ? ? 130 185 i d = 1a, v gs = 1.8v ? ? ? ? ? ? ? ? ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v forward voltage i s = 2a, v gs =0v parameter symbol min. typ. max. unit conditions ? pulsed ?
RW1C020UN data sheet 3/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.05 - rev.a z electrical characteristics curves 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed ta= -25c ta=25c ta=75c ta=125c 10 100 1000 0.01 0.1 1 10 v gs = 1.5v pulsed ta=125c ta=75c ta=25c ta= -25c 10 100 1000 0.01 0.1 1 10 v gs = 1.8v pulsed ta=125c ta=75c ta=25c ta= -25c 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 v gs = 1.2v v gs = 1.3v v gs = 1.5v v gs = 1.8v v gs = 10v v gs = 4.5v v gs = 2.5v ta=25c pulsed 0.001 0.01 0.1 1 10 00.5 11.52 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.01 0.1 1 10 v gs = 1.5v v gs = 1.8v v gs = 2.5v v gs = 4.5v ta= 25c pulsed 0 1 2 3 4 02 46 810 ta=25c pulsed v gs = 4.5v v gs = 2.5v v gs = 1.8v v gs = 1.2v v gs = 1.3v v gs = 1.5v 10 100 1000 0.01 0.1 1 10 v gs = 4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 10 100 1000 0.01 0.1 1 10 v gs = 2.5v pulsed ta=125c ta=75c ta=25c ta= -25c fig .1 typical output characteristics( ) fig.2 typical output characteristics( ) fig .3 typical transfer characteristics fig .4 static drain-source on-state resistance vs. drain current( ) fig .5 static drain-source on-state resistance vs. drain current( ) fig .6 static drain-source on-state resistance vs. drain current( ) fig .9 forward transfer admittance vs. drain current drain current : i d [a] drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] drain current : i d [a] gate-source voltage : v gs [v] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : i d [a] fig .7 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] fig .8 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ]
RW1C020UN data sheet 4/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.05 - rev.a z measurement circuit fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 50% 50% 10% 10 % 90% 90 % 10% v gs v ds t on t off t r t d(on) t r t d(off) pulse width fig.2-1 gate charge measurement circuit v gs i g (const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd z notice this product might cause chip aging and breakd own under the large electrified environment. please consider to design esd protection circuit. 0 1 2 3 4 5 00.511.522.53 ta=25c v dd = 10v i d = 2a r g =10 ? pulsed 0 50 100 150 200 250 300 02 46 810 i d = 1.0a i d = 2.0a ta= 25c pulsed 0.01 0.1 1 10 00.511.5 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 10 100 1000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 1 10 100 1000 0.01 0.1 1 10 t d (on) t d (off) ta=25c v dd = 10v v gs =4.5v r g =10 ? pulsed t r t f fig .10 rever se dr ain cur rent vs. sourse-drain voltag e fig .11 static dr ain- source on-state resistance vs. gate source voltag e fig .13 dynamic input characteristics fig .14 typical capacitance vs. drain-source voltag e fig .12 switching character istics reverse drain current : is [a] source-drain voltage : v sd [v] static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : v gs [v] switching time : t [ns] drain-current : i d [a] gate-source voltage : v gs [v] total gate charge : qg [nc] drain-source voltage : v ds [v] capacitance : c [pf]
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